1SS355 Datasheet, PDF (1/4 Pages) Rohm – Switching diode

1SS355
Silicon Epitaxial Planar Switching Diode
Features
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
Applications
• High speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current (1 s)
Junction Temperature
Storage Temperature Range
Electrical Characteristics (T_a = 25 ^OC)
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 80 V
Capacitance between Terminals
at V_R = 0.5 V, f = 1 MHz
Reverse Recovery Time
at V_R = 6 V, I_F = 10 mA, R_L = 100 Ω
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
90
V
V_R
80
V
I_F(AV)
100
mA
I_FM
225
mA
I_FSM
500
mA
T_j
150
O_C
T_stg
- 55 to + 150
O_C
Symbol
Max.
Unit
V_F
1.2
V
I_R
0.1
µA
C_T
3
pF
t_rr
4
ns