1N60P Datasheet, PDF (1/1 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE

1N60P, 1N60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to
1N60P and 1N60S
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
3.9 max
R5 max
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
10.0± 1.0
1.0 max
Glass case DO-35-1
Dimensions in mm
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
Value
Unit
V_RM
45
V
V_R
20
V
I_O
50
mA
I_FM
150
mA
I_surge
500
mA
T_j
175
O_C
T_S
- 55 to + 175
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Current
at V_F = 1 V
Reverse Current
at V_R = 10 V
Symbol
Min.
Max.
Unit
I_F
4
-
mA
ST60P
I_R
ST60S
-
50
µA
-
100
Junction Capacitance
at f = 1 MHz, V = -1 V
C
-
1
pF
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
η
55
-
%
~~~
output
Input 2Vrms
Rectification Efficiency Measurement Circuit