1N4448WS Datasheet, PDF (1/3 Pages) Won-Top Electronics – SURFACE MOUNT FAST SWITCHING DIODE

1N4448WS
Silicon Epitaxial Planar Switching Diode
Fast Switching Diode
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
100
V
V_R
80
V
I_F(AV)
150
mA
I_FM
300
mA
I_FSM
0.5
A
P_d
200
mW
T_j
150
O_C
T_stg
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 5 mA
at I_F = 10 mA
at I_F = 100 mA
at I_F = 150 mA
Reverse Leakage Current
at V_R = 80 V
at V_R = 20 V
at V_R = 75 V, T_J = 150 ^OC
at V_R = 25 V, T_J = 150 ^OC
Reverse Breakdown Voltage
at I_R = 100 µA
Total Capacitance
at V_R = 0.5 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_rr = 0.1 X I_R , R_L = 100 Ω
Symbol
Min.
Max.
Unit
0.62
0.72
V_F
-
0.855
V
-
1
-
1.25
-
100
nA
I_R
-
25
nA
-
50
µA
-
30
µA
V_(BR)R
80
-
V
C_tot
-
4
pF
t_rr
-
4
ns