 English |
|
|
|
|
|
|
|
| 1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE | |||
| |||
|
1N4448
Silicon Epitaxial Planar Switching Diode
Applications
⢠High-speed switching
This diode is also available in MiniMELF case with
the type designation LL4448.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Rectified Forward Current
IF(AV)
150
mA
Surge Forward Current at t < 1 s
Power Dissipation
IFSM
500
mA
Ptot
500 1)
mW
Junction Temperature
Tj
200
OC
Storage Temperature Range
Tstg
- 65 to + 200
OC
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 5 mA
at IF = 100 mA
Reverse Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage
at IR = 100 µA
Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 â¦
Symbol
Min.
Max.
Unit
VF
0.62
0.72
V
-
1
IR
-
25
nA
IR
-
5
µA
IR
-
50
µA
V(BR)R
100
-
V
Ctot
-
4
pF
trr
-
4
ns
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese