13003 Datasheet, PDF (1/2 Pages) Shenzhen Ping Sheng Electronics Co., Ltd. – SWITCHING REGULATOR APPLICATION.

DONGGUAN NANJING ELECTRONICS LTD.,
TO-220 Plastic-Encapsulate Transistors
13003 TRANSISTOR (NPN)
FEATURES
· power switching applications
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol
VCBO
VCEO
V_EBO
IC
PC
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
2
150
-55 150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min
S ymbol
Collector-base breakdown voltage
V(BR)CBO IC =5mA, IE=0
700
Collector-emitter breakdown voltage V_(BR)CEO I_C=10mA, I_B=0
400
Emitter-base breakdown voltage
V(BR)EBO IE=2mA, IC=0
9
Collector cut-off current
ICBO
VCB=700V,IE=0
Collector cut-off current
ICEO
VCE=400V,IB=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
h_FE1
V_CE=5V, I_C= 0.5 A
8
hFE2
VCE=5V, IC= 1.5A
5
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.25A
Base-emitter saturation voltage
V_BE(sat)
I_C=1A,I_B=0.25A
Transition frequency
fT
VCE=10V,Ic=100mA, f =1MHz
5
Fall time
Storage time
tf
IC=1A, IB1=-IB2=0.2A, VCC=100V
tS
IC=250mA (UI9600)
2
Typ Max
1
0.5
1
40
Unit
V
V
V
mA
mA
mA
0.6
V
1.2
V
MHz
0.5
µs
4
s
CLASSIFICATION OF hFE₁
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF t_S
Rank
A1
Range
2-2.5 ( s )
A2
2.5-3( s )
B1
3-3.5( s )
B2
3.5-4 ( s )