IRF730 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF730
N-Channel Power MOSFET
Electrical Characteristics (TJ = 25^oC unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Symbol Min
Typ
V(BR)DSS
400
-
-
-
IDSS
-
-
IGSSF
-
-
IGSSR
-
-
VGS(th)
2.0
-
RDS(on)
-
0.8
gFS
2.0
-
Ciss
-
775
Coss
-
96
Crss
-
22
td(on)
-
24
tr
-
34
td(off)
-
60
tf
-
36
Qg
-
27
Qgs
-
3.5
Qgd
-
14
LD
-
4.5
Max
-
0.25
1.0
100
-100
4.0
1.0
-
-
-
-
-
-
-
-
32
-
-
-
Unit
Test Conditions
V VGS=0V, ID=250µA
mA ^{VDS=400V, VGS=0V}
VDS=320V, VGS=0V, TJ=125^oC
VGSF=20V, VDS=0V
nA
VGSR=-20V, VDS=0V
V VDS=VGS, ID=250µA
Ω VGS=10V, ID=2.5A(Note)
S VDS= 15V, ID=2.5A(Note)
pF VDS=25V, VGS=0V, f=1.0MHz
ns
VDD=200V, ID=5.0A,
VGS=10V, RG=12Ω, RL=50Ω(Note)
nC VDS=320V, ID=5.0A, VGS=10V(Note)
nH
Measured from the drain lead 0.25"
from package to center of die
Internal Source Inductance
LS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Forward Turn-On Time
ton
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%
-
7.5
-
nH
Measured from the source lead 0.25"
from package to source bond pad
-
-
1.4
V IS=5.0A, VGS=0V(Note)
-
-
660 ns IF=5.0A, di/dt=100A/µs(Note)
Intrinsic turn-on time is neglegible and dominated by inductance LS+LD
-
-
1.67 _{oC/W -}
-
-
62.5
DC COMPONENTS CO., LTD.
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