TIP41C Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
TIP41C
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation(TC=25^oC)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
IC
PD
PD
TJ
TSTG
Rating Unit
100
V
100
V
6
A
65
W
2
W
+150
o_C
-55 to +150 ^oC
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
100
-
Collector-Emitter Breakdown Voltage
BVCEO
100
-
Collector Cutoff Current
ICES
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
30
-
hFE2
15
-
Transition Frequency
fT
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
A
Range
15~50
B
40~75
Max Unit
Test Conditions
-
V IC=1mA, IE=0
-
V IC=30mA, IB=0
400
µA VCE=100V, IB=0
700
µA VCE=60V, IB=0
1
mA VEB=5V, IC=0
1.5
V IC=6A, IB=0.6A
2
V IC=6A, VCE=4V
-
- IC=0.3A, VCE=4V
75
- IC=3A, VCE=4V
-
MHz IC=0.5A, VCE=10V, f=1MHz