TIP32C Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
TIP32C
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(TC=25^oC)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
TJ
TSTG
Rating Unit
-100
V
-100
V
-5
V
-3
A
40
W
2
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -100
-
Collector-Emitter Breakdown Voltage
BVCEO -100
-
Collector Cutoff Current
ICES
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
25
-
hFE2
10
-
Transition Frequency
fT
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-200
-300
-1
-1.2
-1.8
-
50
-
Unit
V
V
µA
µA
mA
V
V
-
-
MHz
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
VCE=-100V
VCE=-60V
VEB=-5V
IC=-3A, IB=-375mA
IC=-3A, VCE=-4V
IC=-1A, VCE=-4V
IC=-3A, VCE=-4V
IC=-0.5A, VCE=-10V, f=1MHz