TIP31C Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – Silicon Epitaxial Planar Transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
TIP31C
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
100
V
100
V
5
V
3
A
40
W
+150
o_C
-55 to +150 ^oC
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
100
-
Collector-Emitter Breakdown Voltage
BVCEO
100
-
Collector Cutoff Current
ICES
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
25
-
hFE2
10
-
Transition Frequency
fT
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V IC=1mA, IE=0
-
V IC=30mA, IB=0
200
µA VCE=100V, IB=0
300
µA VCE=60V, IB=0
1
mA VEB=5V, IC=0
1.2
V IC=3A, IB=375mA
1.8
V IC=3A, VCE=4V
-
- IC=1A, VCE=4V
50
- IC=3A, VCE=4V
-
MHz IC=0.5A, VCE=10V, f=1MHz