TIP125 Datasheet, PDF (1/1 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
TIP125
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier
and low speed switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
TJ
TSTG
Rating Unit
-60
V
-60
V
-5
V
-5
A
2
W
65
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
-60
-
-
V IC=-1mA
Collector-Emitter Breakdown Voltage
BVCEO
-60
-
-
V IC=-100mA
Collector Cutoff Current
ICBO
-
ICEO
-
-
-0.2
mA VCB=-60V
-
-0.5
mA VCE=-30V
Emitter Cutoff Current
IEBO
-
-
-2
mA VEB=-5V
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-2
V IC=-3A, IB=-12mA
-
-4
V IC=-5A, IB=-20mA
-
-2.5
V IC=-3A, VCE=-3V
DC Current Gain⁽¹⁾
hFE1
1K
-
-
-
IC=-500mA, VCE=-3V
hFE2
1K
-
-
-
IC=-3A, VCE=-3V
Output Capacitance
Cob
-
-
300
pF VCB=-10V, f=0.1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%