TIP117 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
TIP117
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and
low-speed switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(TC=25^oC)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PD
PD
TJ
TSTG
Rating Unit
-100
V
-100
V
-5
V
-4
A
-6
A
50
W
2
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Volatge
BVCBO
-100
-
Collector-Emitter Breakdown Voltage
BVCEO
-100
-
Collector Cutoff Current
ICBO
ICEO
-
-
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
hFE2
1K
-
500
-
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V
IC=-1mA, IE=0
-
V
IC=-30mA, IB=0
-1
mA VCB=-100V, IE=0
-2
mA VCE=-50V, IB=0
-2
mA VEB=-5V, IC=0
-2.5
V
IC=-2A, IB=-8mA
-2.8
V
IC=-2A, VCE=-4V
-
-
IC=-1A, VCE=-4V
-
-
IC=-2A, VCE=-4V
200
pF VCE=-10V, f=0.1MHz