SC5094 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
SC5094
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low noise amplifier at VHF, UHF and
CATV band.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
18
V
10
V
2.5
V
20
mA
150
mW
+125
o_C
-50 to +125 ^oC
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector Cutoff Current
ICBO
-
-
1
Emitter Cutoff Current
DC Current Gain⁽¹⁾
IEBO
-
-
1
hFE
50
80
160
Transition Frequency
-
7.6
-
fT
-
9
-
Minimum Noise Figure
-
1.4
-
NFmin
-
1.6
-
Associated Gain
-
12
-
GA
-
13.5
-
Insertion Gain S21 ² in 50Ω system
S21 ²
-
12.8
-
-
13.5
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
µA
µA
-
GHz
GHz
dB
dB
dB
dB
dB
dB
Test Conditions
VCB=3V
VEB=1V
IC=1mA, VCE=2V
IC=10mA, VCE=1V
IC=12mA, VCE=3V
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz