PN2222A Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
PN2222A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high-
speed, medium-power switching applications.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
75
V
40
V
6
V
600
mA
625
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 75
Collector-Emitter Breakdown Voltage BVCEO 40
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
-
ICEX
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
hFE1
35
hFE2
50
DC Current Gain⁽¹⁾
hFE3
75
hFE4
100
hFE5
40
hFE6
50
Transition Frequency
fT
300
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
10
-
10
-
100
-
0.3
-
1
-
1.2
-
2
-
-
-
-
-
-
-
300
-
-
-
-
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
-
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VCB=60V, VEB(off)=3V
VEB=3V, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=150mA, VCE=1V
IC=20mA, VCE=20V, f=100MHz
VCB=10V, f=1MHz