MPSA06 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MPSA06
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
80
V
80
V
4
V
500
mA
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 80
Collector-Emitter Breakdown Voltage BVCEO 80
Emitter-Base Breakdown Volatge
BVEBO
4
Collector Cutoff Current
ICBO
-
ICEO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
DC Current Gain⁽¹⁾
hFE1
50
hFE2
50
Transition Frequency
fT
100
Typ Max
-
-
-
-
-
-
-
0.1
-
0.1
-
0.25
-
1.2
-
-
-
-
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=80V, IE=0
VCE=60V, IB=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz