MML1225 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MML1225
MXL1225
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 300 to 380 Volts
CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high
performance planar diffused PNPN devices.
They are intended for low cost, high volume
applications.
SOT-89
Pinning
1 = Gate
2 = Anode
3 = Cathode
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating
Unit
Peak Repetitive Off-State
Voltage(RGK=1KΩ)
MML1225 _VDRM
MXL1225
300
380
V
On-State RMS Current(TC=40^oC)
IT(RMS)
0.8
A
Peak Gate Current(10µs Max)
IGM
1
A
Gate Power Dissipation(20ms Max)
PG(AV)
0.1
W
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
VGRM
8
V
TJ
-40 to +125 ^oC
TSTG -40 to +125 ^oC
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Peak Repetitive Forward
Off-State Blocking Current
TA=25^oC
TA=125^oC
IDRM
-
-
Typ
Max
-
5
-
100
Peak Forward On-State Voltage
-
VTM
-
-
1.4
-
2.2
Continuous DC Gate Trigger Current
IGT
-
-
200
Continuous DC Gate Trigger Voltage
VGT
-
-
0.8
DC Holding Current
IH
-
-
5
DC Latching Current
IL
-
-
6
Critical Rate-of-Rise of Off-State Voltage
dv/dt
25
-
-
Critical Rate-of-Rise of Off-State Current
di/dt
30
-
-
Gate Controlled Delay Time
Tgd
-
-
0.5
Thermal Resistance, Junction to Case
RθJC
100
-
-
Unit
µA
V
µA
V
mA
mA
V/µS
A/µS
µsec
o_C/W
Test Conditions
VAK=Rated VDRM or VRRM
RGK=1KΩ
ITM=0.4A Peak, TJ=25^oC
ITM=0.8A Peak, TJ=25^oC
VAK=7V DC, RL=100Ω
VAK=7V DC, RL=100Ω
RGK=1KΩ, Gate Open
RGK=1KΩ, Gate Open
VD=0.67VDRM, RGK=1KΩ, TJ=125^oC
IG=10mA, diG/dt=0.1A/µS, TJ=125^oC
IG=10mA, diG/dt=0.1A/µS
-