MJE3055T Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJE3055T
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and switching
applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
70
V
60
V
5
V
10
A
6
A
75
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ
Collector-Base Breakdown Volatge
BVCBO
70
-
Collector-Emitter Breakdown Voltage
BVCEO
60
-
Emitter-Base Breakdown Voltage
BVEBO
5
-
ICBO
-
-
Collector Cutoff Current
ICEX
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
VCE(sat)1
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)2
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
20
-
hFE2
5
-
Transition Frequency
fT
2
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V IC=10mA, IE=0
-
V IC=200mA, IB=0
-
V IE=10mA, IC=0
1 mA VCB=70V, IE=0
1 mA VCE=70V, VEB(off)=1.5V
0.7 mA VCE=30V, IB=0
5 mA VEB=5V, IC=0
1.1 V IC=4A, IB=400mA
8
V IC=10A, IB=3.3A
1.8 V IC=4A, VCE=4V
100 - IC=4A, VCE=4V
-
- IC=10A, VCE=4V
- MHz IC=500mA, VCE=10V, f=0.5MHz