MJE13005 Datasheet, PDF (1/1 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJE13005
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCEX
VCEO
VEBO
IC
IB
PD
TJ
TSTG
700
V
400
V
9
V
4
A
2
A
75
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Collector-Emitter Breakdown Volatge
BVCEX
700
-
BVCEO
400
-
Collector Cutoff Current
ICEX
-
-
Emitter Cutoff Current
IEBO
-
-
VCE(sat)1
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)2
-
-
VCE(sat)3
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
-
VBE(sat)2
-
-
DC Current Gain⁽¹⁾
hFE1
hFE2
10
-
10
-
hFE3
8
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
1
1
0.5
0.6
1
1.2
1.6
60
60
40
Unit
Test Conditions
V IC=1mA, VBE(off)=1.5V
V IC=10mA
mA VCE=700V, VBE(off)=1.5V
mA VEB=9V
V IC=1A, IB=200mA
V IC=2A, IB=500mA
V IC=4A, IB=1A
V IC=1A, IB=200mA
V IC=2A, IB=500mA
- IC=0.5A, VCE=5V
- IC=1A, VCE=5V
- IC=2A, VCE=5V