MJE13003D Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
TO-126ML
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
VCEV
700
V
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
1.5
A
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IB
PD
TJ
TSTG
0.75
A
40
W
+150
o_C
-55 to +150 ^oC
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.056(1.42)
.046(1.17)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.180
(4.56)
Typ
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
BVCEV 700
-
-
V
IC=1mA, VBE(off)=1.5V
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
V IC=10mA
Collector Cutoff Current
ICEV
-
-
1
mA VCE=700V, VBE(off)=1.5V
Emitter Cutoff Current
IEBO
-
-
1
mA VEB=9V
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)2 -
-
0.5
V IC=0.5A, IB=0.1A
-
1
V IC=1A, IB=0.25A
VCE(sat)3
-
-
3
V IC=1.5A, IB=0.5A
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1
V IC=0.5A, IB=0.1A
-
1.2
V IC=1A, IB=0.25A
DC Current Gain⁽¹⁾
hFE1
8
hFE2
5
-
40
-
25
-
IC=0.5A, VCE=2V
-
IC=1A, VCE=2V
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%