MJE13003 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – NPN SILICON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJE13003
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
TO-126
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
VCEV
700
V
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
1.5
A
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IB
PD
TJ
TSTG
0.75
A
40
W
+150
o_C
-55 to +150 ^oC
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
.152(3.86)
.138(3.50)
.279(7.09)
.275(6.99)
1 23
3^oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3^oTyp
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
Dimensions in inches and (millimeters)
3^oTyp
3^oTyp
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
BVCEV 700
-
-
V
IC=1mA, VBE(off)=1.5V
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
V IC=10mA
Collector Cutoff Current
ICEV
-
-
1
mA VCE=700V, VBE(off)=1.5V
Emitter Cutoff Current
IEBO
-
-
1
mA VEB=9V
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)2 -
-
0.5
V IC=0.5A, IB=0.1A
-
1
V IC=1A, IB=0.25A
VCE(sat)3
-
-
3
V IC=1.5A, IB=0.5A
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1
V IC=0.5A, IB=0.1A
-
1.2
V IC=1A, IB=0.25A
DC Current Gain⁽¹⁾
hFE1
8
hFE2
5
-
40
-
25
-
IC=0.5A, VCE=2V
-
IC=1A, VCE=2V
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%