MJD122 Datasheet, PDF (1/1 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJD122
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and
low speed switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IC
PD
TJ
TSTG
8
A
20
W
+150
o_C
-55 to +150 ^oC
TO-252(DPAK)
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
.063(1.60)
.055(1.40)
.077(1.95)
.065(1.65)
.022(0.55)
.018(0.45)
.228(5.80)
.213(5.40)
1
.035
(0.90)
Max
.032 _Max
(0.80)
23
.110(2.80)
.087(2.20)
.091
(2.30)
Typ
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 100
-
-
V IC=1mA
Collector-Emitter Breakdown Voltage
BVCEO 100
-
-
V IC=30mA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V IE=1mA
Collector Cutoff Current
ICBO
-
ICEO
-
-
10
µA VCB=100V
-
10
µA VCE=50V
Emitter Cutoff Current
IEBO
-
-
2
mA VEB=5V
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
2
V IC=4A, IB=16mA
-
4
V IC=8A, IB=80mA
-
4.5
V IC=8A, IB=80mA
-
2.8
V IC=4A, VCE=4V
DC Current Gain⁽¹⁾
hFE1
1K
-
12K
-
IC=4A, VCE=4V
hFE2 100
-
-
-
IC=8A, VCE=4V
Output Capacitance
Cob
-
-
200 pF VCB=10V, f=1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%