MJD112 Datasheet, PDF (1/1 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MJD112
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IC
PD
TJ
TSTG
2
A
20
W
+150
o_C
-55 to +150 ^oC
TO-252(DPAK)
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
.063(1.60)
.055(1.40)
.077(1.95)
.065(1.65)
.022(0.55)
.018(0.45)
1
.035
(0.90)
Max
.032
(0.80)
Max
.228(5.80)
.213(5.40)
23
.110(2.80)
.087(2.20)
.091
(2.30)
Typ
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 100
-
-
V IC=1mA
Collector-Emitter Breakdown Voltage
BVCEO 100
-
-
V IC=30mA
Collector Cutoff Current
ICBO
-
ICEO
-
-
10
µA VCB=80V
-
20
µA VCE=50V
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
2
mA VBE=5V
-
2.5
V IC=2A, IB=8mA
-
2.8
V IC=2A, VCE=3V
DC Current Gain⁽¹⁾
hFE1 500
-
-
-
IC=0.5A, VCE=3V
hFE2
1K
-
12K
-
IC=2A, VCE=3V
hFE3 200
-
-
-
IC=4A, VCE=3V
Output Capacitance
Cob
-
-
100 pF VCB=10V
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%