MID31C Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MID31C
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
100
V
100
V
5
V
3
A
15
W
+150
o_C
-55 to +150 ^oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
2
.284(7.20)
.268(6.80)
.063(1.60)
.055(1.40)
123
.035 _Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 _Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
100
-
Collector-Emitter Breakdown Voltage
BVCEO
100
-
Collector Cutoff Current
ICES
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
25
-
hFE2
10
-
Transition Frequency
fT
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V IC=1mA, IE=0
-
V IC=30mA, IB=0
20
µA VCE=100V, VEB=0
50
µA VCE=60V, IB=0
1
mA VEB=5V, IC=0
1.2
V IC=3A, IB=375mA
1.8
V IC=3A, VCE=4V
-
- IC=1A, VCE=4V
50
- IC=3A, VCE=4V
-
MHz IC=0.5A, VCE=10V, f=1MHz