MID117 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MID117
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
TO-251
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IC
PD
TJ
TSTG
-2
A
25
W
+150
o_C
-55 to +150 ^oC
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
2
.284(7.20)
.268(6.80)
.063(1.60)
.055(1.40)
123
.035 _Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 _Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO -100
-
-
V IC=-1mA
Collector-Emitter Breakdown Voltage
BVCEO -100
-
-
V IC=-30mA
Collector Cutoff Current
ICBO
-
ICEO
-
-
-10 µA VCB=-80V
-
-20 µA VCE=-50V
Emitter Cutoff Current
IEBO
-
-
-2
mA VBE=-5V
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-2
V IC=-2A, IB=-8mA
-
-3
V IC=-4A, IB=-80mA
-
-4
V IC=-4A, IB=-40mA
-
-2.8
V IC=-2A, VCE=-4V
DC Current Gain⁽¹⁾
hFE1 500
-
-
-
IC=-0.5A, VCE=-3V
hFE2
1K
-
12K
-
IC=-2A, VCE=-3V
hFE3 200
-
-
-
IC=-4A, VCE=-3V
Output Capacitance
Cob
-
-
200 pF VCB=-10V, f=0.1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%