M28S Datasheet, PDF (1/1 Pages) Unisonic Technologies – AUDIO OUTPUT DRIVER AMPLIFIER

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
M28S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose "Speech
Synthesizer" (Voice ROM) IC audio output driver
stage amplifier applications.
Pinning
3 = Emitter
1 = Collector
2 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating Unit
40
V
20
V
6
V
1.25
A
0.4
A
850
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 40
-
Collector-Emitter Breakdown Voltage BVCEO 20
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
Collector Cutoff Current
ICBO
-
-
EmitterCutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
hFE1
290
-
DC Current Gain⁽¹⁾
hFE2
300
-
hFE3
300
-
hFE4
300
-
Transition Frequency
fT
100
-
Output Capacitance
Cob
-
9
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
0.1
0.1
0.55
-
1000
-
-
-
-
Classification of hFE2
Rank
Range
B
300~550
C
500~700
D
650~1000
Unit
V
V
V
µA
µA
V
-
-
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
IC=600mA, IB=20mA
IC=1mA, VCE=1V
IC=0.1A, VCE=1V
IC=0.3A, VCE=1V
IC=0.5A, VCE=1V
IC=50mA, VCE=10V, f=1MHz
VCB=10V, f=1MHz, IE=0