LB123T Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
LB123T
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high voltage, high speed switching
circuits, and amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pluse)
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
PD
TJ
TSTG
600
V
400
V
8
V
1
A
2
A
3.5
W
30
W
+150
o_C
-55 to +150 ^oC
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
TO-126
.152(3.86)
.138(3.50)
.279(7.09)
.275(6.99)
1 23
3^oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3^oTyp
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
Dimensions in inches and (millimeters)
3^oTyp
3^oTyp
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 600
-
-
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
Emitter-Base Breakdown Volatge
BVEBO
8
-
-
Collector Cutoff Current
ICBO
-
-
10
Emitter Cutoff Current
IEBO
-
-
10
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)1
-
VCE(sat)2
-
-
0.8
-
0.9
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.2
-
1.8
DC Current Gain⁽¹⁾
hFE1
10
-
50
hFE2
10
-
-
hFE3
6
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mA, IC=0
µA VCB=600V, IE=0
µA VBE=9V, IC=0
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
- IC=0.3A, VCE=5V
- IC=0.5A, VCE=5V
- IC=1A, VCE=5V
Classification of hFE1
Rank
B1
B2
Range
10~17
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~42
B7
38~47
B8
43~50