LB123D Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
LB123D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high voltage, high speed switching
circuits, and amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pluse)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
600
V
400
V
8
V
1
A
2
A
30
W
+150
o_C
-55 to +150 ^oC
TO-126ML
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.056(1.42)
.046(1.17)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.180
(4.56)
Typ
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 600
-
-
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
Emitter-Base Breakdown Volatge
Collector Cutoff Current
BVEBO
8
ICBO
-
-
-
-
10
Emitter Cutoff Current
IEBO
-
-
10
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
0.8
-
0.9
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.2
-
1.8
DC Current Gain⁽¹⁾
hFE1
10
-
50
hFE2
10
-
-
hFE3
6
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mA, IC=0
µA VCB=600V, IE=0
µA VBE=9V, IC=0
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
V IC=0.1A, IB=10mA
V IC=0.3A, IB=30mA
- IC=0.3A, VCE=5V
- IC=0.5A, VCE=5V
- IC=1A, VCE=5V
Classification of hFE1
Rank
B1
B2
Range 10~17 13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~42
B7
38~47
B8
43~50