IRF640 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
IRF640
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
VDSS = 200 Volts
RDS(ON) = 0.18 Ohm
ID = 18 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
Description
Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
Pinning
1 = Gate
2 = Drain
3 = Source
Symbol
D
G
S
N-Channel MOSFET
.405(10.28)
.151 _Typ .380(9.66)
(3.83)
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
1 23
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640 _Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54) ^Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings
Characteristic
Drain Current @ TC=25^oC
Continuous
Pulsed
Gate-to-Source Voltage
Total Power Dissipation @ TC=25^oC
Derate above 25^oC
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
Symbol
ID
IDM
VGS
PD
TJ
TSTG
TL
Rating
18
72
20
125
1.0
-55 to +150
-55 to +150
260
Unit
A
V
W
W/^oC
o_C
o_C
o_C