I772 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
I772
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio
amplifier, voltage regulator, DC-DC converter,
and relay driver.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-3
A
Collector Current (pulse)
IC
-7
A
Base Current (DC)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IB
PD
TJ
TSTG
-600
mA
10
W
+150
o_C
-55 to +150 ^oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
2
.284(7.20)
.268(6.80)
.063(1.60)
.055(1.40)
123
.035 _Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 _Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage
BVCBO -40
-
-
Collector-Emitter Breakdown Voltage
BVCEO -30
-
-
Emitter-Base Breakdown Voltage
BVEBO -5
-
-
Collector Cutoff Current
ICBO
-
-
-1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
-1
-0.3 -0.5
-1
-2
DC Current Gain⁽¹⁾
hFE1
30
-
-
hFE2 100
-
500
Transition Frequency
fT
-
80
-
Output Capacitance
Cob
-
55
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
Range
Q
100~200
P
160~320
E
250~500
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V, f=100MHz
VCB=-10V, f=1MHz