DXTD965 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTD965
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AF output amplifier and flash unit.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (continuous)
IC
Collector Current (peak PT=10mS) IC
Total Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
Rating Unit
40
V
20
V
7
V
5
A
8
A
1.2
W
+150
o_C
-55 to +150 ^oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 40
-
-
Collector-Emitter Breakdown Voltage
BVCEO 20
-
-
Emitter-Base Breakdown Volatge
BVEBO
7
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
-
0.1
0.35 1
DC Current Gain⁽¹⁾
hFE1 340
-
800
hFE2 150
-
-
Transition Frequency
fT
-
150
-
Output Capacitance
Cob
-
-
50
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=10V
VEB=7V
IC=3A, IB=0.1A
IC=0.5A, VCE=2V
IC=2A, VCE=2V
IE=50mA, VCE=6V
VCB=20V, f=1MHz
Classification of hFE1
Rank
Range
R
340~600
S
560~800