DXTD882 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTD882
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for the output stage of 0.75W audio,
voltage regulator, and relay driver.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
40
V
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IC
PD
TJ
TSTG
3
A
1.5
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 40
-
-
Collector-Emitter Breakdown Voltage
BVCEO 30
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
1
-
0.5
-
2
DC Current Gain⁽¹⁾
hFE1
30
-
-
hFE2 100
-
500
Transition Frequency
fT
-
90
-
Output Capacitance
Cob
-
45
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=3V, IB=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=20mA, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE2
Rank
Q
P
Range 100~200 160~320
E
250~500