DXTB772 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTB772
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage amplifier, voltage
regulator, DC-DC converter and driver.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (continuous)
Collector Current (pulse)⁽¹⁾
Total Power Dissipation⁽²⁾
Total Power Dissipation⁽³⁾
Total Power Dissipation⁽⁴⁾
Junction Temperature
Storage Temperature
IC
IC
PD
PD
PD
TJ
TSTG
-3
A
-7
A
1
W
2
W
1.5
W
+150
o_C
-55 to +150 ^oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -40
-
-
Collector-Emitter Breakdown Voltage
BVCEO -30
-
-
Emitter-Base Breakdown Volatge
BVEBO -5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽⁵⁾ VCE(sat) -
Base-Emitter Saturation Voltage⁽⁵⁾
VBE(sat)
-
-
-
-
-1
-
-1
-0.3 -0.5
-1
-2
DC Current Gain⁽⁵⁾
hFE1
30
-
-
hFE2 100 160 500
Transition Frequency
fT
-
80
-
Output Capacitance
Cob
-
55
-
(1)Single pulse PW=1ms
(2)When tested in free air condition, without heat sinking.
(3)When mounted on a 40x40X1mm ceramic board.
(4)Printed circuit board 2mm thick, collector plating 1cm square or larger.
(5)Pulse Test: Pulse Width 380µs, Duty Cycle 2%.
Classification of hFE2
Rank
Q
P
E
Range 100~200 160~320 250~500
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-100mA, VCE=-5V, f=100MHz
VCB=-10V, f=1MHz