DXTA94 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTA94
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
-400
V
-400
V
-6
V
-500
mA
1
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Collector-Base Breakdown Volatge
BVCBO -400
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO -400
-
-
V
Emitter-Base Breakdown Volatge
BVEBO -6
-
-
V
Collector Cutoff Current
ICBO
-
ICES
-
- -100 nA
- -500 nA
Emitter Cutoff Current
IEBO
-
- -100 nA
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)2 -
- -0.35 V
-
-0.5
V
Base-Emitter Saturation Voltage⁽¹⁾
VCE(sat)3
-
VBE(sat)
-
- -0.75 V
- -0.75 V
hFE1
40
-
-
-
DC Current Gain⁽¹⁾
hFE2
50
hFE3
45
-
300
-
-
-
-
hFE4
40
-
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-400V
VCE=-400V, VBE=0
VEB=-6V
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-50mA, VCE=-10V
IC=-100mA, VCE=-10V