DXTA42 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTA42
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics
telephone.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
300
V
300
V
6
V
500
mA
1
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 300
-
-
Collector-Emitter Breakdown Voltage
BVCEO 300
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
-
100
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
100
-
0.5
-
0.9
hFE1
25
-
-
DC Current Gain(1)
hFE2
40
-
-
hFE3
40
-
-
Transition Frequency
fT
50
-
-
Output Capacitance
Cob
-
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=260V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
VCE=20V, IC=10mA, f=100MHz
VCB=20V