DXTA13 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXTA13
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high
current gain.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
Rating Unit
30
V
30
V
10
V
300
mA
1
W
+150
o_C
-55 to +150 ^oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 30
-
-
Collector-Emitter Breakdown Voltage
BVCES 30
Emitter-Base Breakdown Volatge
BVEBO 10
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat) -
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-
-
-
-
100
-
100
-
1.5
-
2
DC Current Gain⁽¹⁾
hFE1
5K
-
-
hFE2 10K
-
-
Transition Frequency
fT
125
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=100µA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
VCE=5V, f=100MHz, IC=10mA