DXT5401 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXT5401
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltages.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-160
V
-150
V
-5
V
-500
mA
1
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -160
-
-
Collector-Emitter Breakdown Voltage
BVCEO -150
-
-
Emitter-Base Breakdown Volatge
BVEBO -5
-
-
Collector Cutoff Current
ICBO
-
-
-50
Emitter Cutoff Current
IEBO
-
-
-50
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
-0.2
-
-0.5
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
-1
-
-1
DC Current Gain⁽¹⁾
hFE1
50
hFE2
60
-
-
-
240
hFE3
50
-
-
Transition Frequency
fT
100
-
-
Output Capacitance
Cob
-
-
6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
VEB=-5V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-50mA, VCE=-5V
VCE=-10V, f=100MHz, IC=-10mA
VCB=-10V, f=1MHz