DXT2907A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXT2907A
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
-60
V
-60
V
-5
V
-600
mA
1.2
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -60
-
-
Collector-Emitter Breakdown Voltage
BVCEO -60
-
-
Emitter-Base Breakdown Volatge
BVEBO -5
-
-
Collector Cutoff Current
ICBO
-
ICEX
-
-
-10
-
-50
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-0.2 -0.4
-0.5 -1.6
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
-1.3
-
-2.6
hFE1
75
-
-
DC Current Gain⁽¹⁾
hFE2 100
-
-
hFE3 100
-
-
hFE4 100
-
300
hFE5
50
-
-
Transition Frequency
fT
200
-
-
Output Capacitance
Cob
-
-
8
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
mV
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-10mA
IE=-10µA
VCB=-50V
VCE=-30V, VBE=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-100µA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V
IC=-500mA, VCE=-10V
VCE=-20V, f=100MHz, IC=-50mA
VCB=-10V, f=1MHz