DXT2222A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DXT2222A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
75
V
40
V
6
V
600
mA
1.2
W
+150
o_C
-55 to +150 ^oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 75
-
-
Collector-Emitter Breakdown Voltage
BVCEO 40
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
ICEX
-
-
10
-
10
Emitter Cutoff Current
IEBO
-
-
50
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
0.3
-
1
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.2
-
2
hFE1
35
-
-
hFE2
50
-
-
DC Current Gain⁽¹⁾
hFE3
75
-
-
hFE4 100
-
300
hFE5
40
-
-
hFE6
50
-
-
Transition Frequency
fT
300
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=100µA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=150mA, VCE=1V
VCE=20V, f=100MHz, IC=20mA