DMBTA44 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBTA44
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
450
V
400
V
6
V
300
mA
350
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 450
Collector-Emitter Breakdown Voltage
BVCEO 400
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
-
ICES
-
Emitter Cutoff Current
IEBO
-
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VCE(sat)3
-
VBE(sat)
-
hFE1
40
DC Current Gain⁽¹⁾
hFE2
50
hFE3
45
hFE4
40
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
Test Conditions
-
-
V
IC=100µA
-
-
V
IC=1mA
-
-
V
IE=10µA
-
100
nA
VCB=400V
-
500
nA
VCE=400V
-
100
nA
VEB=4V
-
0.4
V
IC=1mA, IB=0.1mA
-
0.5
V
IC=10mA, IB=1mA
-
0.75
V
IC=50mA, IB=5mA
-
0.75
V
IC=10mA, IB=1mA
-
-
-
IC=1mA, VCE=10V
-
300
-
IC=10mA, VCE=10V
-
-
-
IC=50mA, VCE=10V
-
-
-
IC=100mA, VCE=10V
4
6
pF
VCB=20V, f=1MHz