DMBT9012 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT9012
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-40
-20
-5
-500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o_C
o_C
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -40
Collector-Emitter Breakdown Voltage BVCEO -20
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
DC Current Gain⁽¹⁾
hFE1
120
hFE2
40
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
-0.1
-
-0.1
-
-0.6
-
-1.2
-
350
-
-
Unit
V
V
V
µA
µA
V
V
-
-
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
IC=-50mA, VCE=-1V
IC=-500mA, VCE=-1V
Classification of hFE1
Rank
L
H
Range
120~200
200~350