DMBT8550 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT8550
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-25
V
-20
V
-5
V
-500
mA
225
mW
+150
o_C
-55 to +150 ^oC
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ Max
Collector-Base Breakdown Volatge
BVCBO -25
-
-
Collector-Emitter Breakdown Voltage
BVCEO -20
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICBO
-
-
-1
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter Saturation Voltage⁽¹⁾
DC Current Gain⁽¹⁾
IEBO
-
VCE(sat)
-
VBE(sat)
-
hFE
120
-
-0.1
-
-0.6
-
-1.2
-
400
Transition Frequency
fT
150
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
MHz
Test Conditions
IC=-10µA
IC=-1mA
IE=-10µA
VCB=-20V
VEB=-3V
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
IC=-50mA, VCE=-1V
IC=-20mA, VCE=-10V, f=100MHz
Classification of hFE
Rank
C
Range
120~200
D
150~350
E
250~400