DMBT4403 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT4403
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-40
V
-40
V
-5
V
-600
mA
225
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -40
-
Collector-Emitter Breakdown Voltage
BVCEO -40
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
Collector Cutoff Current
ICEX
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)1
-
-
VCE(sat)2
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
30
-
DC Current Gain⁽¹⁾
hFE2
60
-
hFE3
100
-
hFE4
100
-
hFE5
20
-
Transition Frequency
fT
200
-
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
-100
-0.4
-0.75
-0.95
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-100µA
-
IC=-1mA
IE=-10µA
VCE=-35V, VEB=-0.4V
IC=-150mA, IB= 15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-0.1mA, VCE=-1V
IC=-1mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-150mA, VCE=-2V
IC=-500mA, VCE=-2V
IC=-20mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz