DMBT2222A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT2222A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
225
mW
+150
o_C
-55 to +150 ^oC
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
75
-
Collector-Emitter Breakdown Voltage
BVCEO
40
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
ICEX
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)1
-
-
VCE(sat)2
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
35
-
DC Current Gain⁽¹⁾
hFE2
50
-
hFE3
75
-
hFE4
100
-
hFE5
40
-
Transition Frequency
fT
300
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Max Unit
Test Conditions
-
V
IC=10µA
-
V
IC=10mA
-
V
IE=10µA
10
nA
VCB=60V
10
nA
VCE=60V, VEB(off)=3V
10
nA
VEB=3V
0.5
V
IC=380mA, IB=10mA
1.0
V
IC=500mA, IB=50mA
1.2
V
IC=150mA, IB=15mA
2.0
V
IC=500mA, IB=50mA
-
-
IC=0.1mA, VCE=10V
-
-
IC=1mA, VCE=10V
-
-
IC=10mA, VCE=10V
300
-
IC=150mA, VCE=10V
-
-
IC=500mA, VCE=10V
-
MHz IC=20mA, VCE=20V, f=100MHz