DMBT2222 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT2222
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
600
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
250
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO
60
-
-
Collector-Emitter Breakdown Voltage
BVCEO
30
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.01
Emitter Cutoff Current
IEBO
-
-
10
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)1
-
VCE(sat)2
-
-
0.4
-
1.6
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.3
-
2.6
hFE1
35
-
-
DC Current Gain⁽¹⁾
hFE2
50
-
-
hFE3
75
-
-
hFE4
100
-
300
hFE5
30
-
-
Transition Frequency
fT
250
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
nA
V
V
V
V
-
-
-
-
-
MHz
Test Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=50V
VCE=60V, VEB(off)=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=20mA, VCE=20V, f=100MHz