DCR106-3 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR106-3
THRU
DCR106-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 4.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
DCR106-3
100
Peak Repetitive Off-State
DCR106-4 VDRM,
200
Voltage and Reverse Voltage ^{DCR106-6 VRRM}
400
V
DCR106-8
600
On-State RMS Current
(TA=57^oC, 180^o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
IT(RMS)
4.0
A
ITSM
25
A
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
IGM
1.0
A
PGM
0.5
W
PG(AV)
0.1
W
TJ
-40 to +110 ^oC
TSTG -40 to +150 ^oC
TO-126
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
.279(7.09)
.275(6.99)
1 23
3^oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3^oTyp
.152(3.86)
.138(3.50)
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
(0.0.5252) ^Typ
3^oTyp
3^oTyp
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Peak Repetitive Forward or Reverse ^TJ=25oC
-
-
Off-State Blocking Current
TJ=110^oC
IDRM, IRRM
-
-
Peak Forward On-State Voltage
VTM
-
-
Continuous DC Gate Trigger Current
IGT
-
-
Continuous DC Gate Trigger Voltage
VGT
-
-
DC Holding Current
IH
-
-
Critical Rate-of-Rise of Off-State Voltage
dv/dt
-
8.0
Gate Controlled Turn-on Time(tD+tR)
Tgt
-
2.2
Thermal Resistance, Junction to Case
RθJC
-
3.0
Max Unit
Test Conditions
10
VAK=Rated VDRM or VRRM
200
µA
RGK=1KΩ
2.0
V
ITM=4A Peak
200
µA
VAK=7V DC, RL=100Ω
0.8
V
VAK=7V DC, RL=100Ω
5.0
mA RGK=1KΩ
-
V/µS RGK=1KΩ
-
µsec IGT=10mA
-
o_{C/W -}