DCR100-3 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR100-3
THRU
DCR100-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 0.8 Ampere
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Gate, 3 = Anode
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol
Rating
Unit
DCR100-3
100
Peak Repetitive Off-State
DCR100-4 VDRM,
Voltage and Reverse Voltage ^{DCR100-6 VRRM}
200
400
V
DCR100-8
600
On-State RMS Current
(TA=57^oC, 180^o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current(For 3µ sec.)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
IT(RMS)
0.8
A
ITSM
8
A
IGM
0.8
A
PGM
0.1
W
PG(AV)
0.01
W
VGRM
TJ
TSTG
6.0
V
-40 to +110 ^oC
-40 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500 _Min
(12.70)
.050 _Typ
(1.27)
.022(0.56)
.014(0.36)
(2.1.5040)Typ
2^oTyp
2^oTyp
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5^oTyp 5^oTyp (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Peak Repetitive Forward or Reverse
Off-State Blocking Current
TA=25^oC
TA=125^oC
IDRM, IRRM
-
-
-
-
Peak Forward On-State Voltage
VTM
-
-
Continuous DC Gate Trigger Current
IGT
-
-
Continuous DC Gate Trigger Voltage
VGT
-
-
DC Holding Current
IH
-
-
Critical Rate-of-Rise of Off-State Voltage
dv/dt
-
5
Gate Controlled Turn-on Time(tD+tR)
Tgt
-
2.2
Thermal Resistance, Junction to Case
RθJC
-
75
Max Unit
Test Conditions
10
VAK=Rated VDRM or VRRM
200
µA _RGK=1KΩ
1.7
V ITM=0.8A Peak, TC=25^oC
200
µA VAK=7V DC, RL=100Ω
0.8
V VAK=7V DC, RL=100Ω
10
mA RGK=1KΩ, Gate Open
-
V/µS RGK=1KΩ, Gate Open
-
µsec IGT=10mA
-
o_{C/W -}