DCR03B Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 200 to 600 Volts

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR03B
THRU
DCR03F
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 200 to 600 Volts
CURRENT - 0.3 Ampere
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 200 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Gate, 2 = Anode, 3 = Cathode
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol
Rating
Unit
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR03B
DCR03D
DCR03F
VDRM,
VRRM
200
400
600
V
On-State Average Current
(TA=30^oC, 180^o Conduction Angles)
On-State RMS Current
(TA=30^oC, 180^o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
IT(AV)
0.3
A
IT(RMS)
0.47
A
ITSM
8
A
IGM
0.1
A
PGM
0.1
W
PG(AV)
0.01
W
TJ
-40 to +110 ^oC
TSTG
-40 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500 _Min
(12.70)
.050 _Typ
(1.27)
.022(0.56)
.014(0.36)
(2.1.5040)Typ
2^oTyp
2^oTyp
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5^oTyp 5^oTyp (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Peak Repetitive Forward or Reverse
TJ=25^oC
-
-
Off-State Blocking Current
TJ=110^oC
IDRM, IRRM
-
-
Peak Forward On-State Voltage
VTM
-
-
Continuous DC Gate Trigger Current
IGT
-
-
Continuous DC Gate Trigger Voltage
VGT
-
-
DC Holding Current
IH
-
-
Critical Rate-of-Rise of Off-State Voltage
dv/dt
-
5.0
Gate Controlled Turn-on Time(tD+tR)
Tgt
-
2.2
Thermal Resistance, Junction to Case
RθJC
-
75
Max Unit
Test Conditions
10
VAK=Rated VDRM or VRRM
100
µA _RGK=1KΩ
1.7
V ITM=0.3A Peak
200
µA VAK=7V DC, RL=100Ω
0.8
V VAK=7V DC, RL=100Ω
5.0
mA RGK=1KΩ
-
V/µS RGK=1KΩ
-
µsec IGT=10mA
-
o_{C/W -}