DC9018 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
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DISCRETE SEMICONDUCTORS
DC9018
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating Unit
30
V
15
V
5
V
50
mA
10
mA
400
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 30
Collector-Emitter Breakdown Voltage BVCEO 15
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
DC Current Gain⁽¹⁾
hFE
28
Transition Frequency
fT
700
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
1100
1.3
Max
-
-
-
50
0.5
270
-
1.7
Unit
V
V
V
nA
V
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=12V
IC=10mA, IB=1mA
IC=1mA, VCE=5V
IC=5mA, VCE=5V
VCB=10V, IE=0
Classification of hFE
Rank
D
E
Range
28~45
39~60
F
54~80
G
72~108
H
97~146
I
132~198
J
180~270