DC9015 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DC9015
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-50
V
-45
V
-5
V
-100
mA
450
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -50
Collector-Emitter Breakdown Voltage BVCEO -45
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage
DC Current Gain⁽¹⁾
VBE(on) -0.6
hFE
60
Transition Frequency
fT
100
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.2
-0.82
-0.65
-
190
4.5
Max
-
-
-
-50
-50
-0.7
-1
-0.75
1000
-
7
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
IC=-2mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz, IE=0
Classification of hFE
Rank
A
Range
60~150
B
100~300
C
200~600
D
400~1000