DC9013 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DC9013
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating Unit
40
V
20
V
5
V
500
mA
100
mA
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 40
Collector-Emitter Breakdown Voltage BVCEO 20
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage
VBE(on)
-
DC Current Gain⁽¹⁾
hFE1
64
hFE2
40
Transition Frequency
fT
100
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
100
-
100
-
0.6
-
1.2
-
0.9
120 300
-
-
-
-
-
8
Classification of hFE1
Rank
D
E
F
G
H
Range
64~91
78~112
96~135 112~166 144~202
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=500mA, VCE=1V
IC=10mA, VCE=1V, f=100MHz
VCB=10V, f=1MHz
I
176~300
I1
176~246
I2
214~300