DC8550S Datasheet, PDF (1/2 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
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DISCRETE SEMICONDUCTORS
DC8550S
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-700
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -25
-
-
Collector-Emitter Breakdown Voltage BVCEO -20
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-1
-
-0.6
-
-1
DC Current Gain⁽¹⁾
hFE1
85
hFE2
-
-
500
170
-
Transition Frequency
fT
150
-
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
10
Unit
V
V
V
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-1mA
IE=-10µA
VCB=-20V
IC=-0.5A, IB=-50mA
IC=-150mA, VCE=-1V
IC=-150mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-20mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz
Classification of hFE1
Rank
B
C
Range
85~160
100~200
D
150~300
E
250~500